With the vigorous development of microelectronics and semiconductor technology, motors and electronic components have gradually entered the era of miniature, lightweight, high- energy density, and high-power output. The heat flux density of electronic substrates has increased significantly, and maintaining a stable operating environment inside the equipment has become a technical issue that needs to be focused on. AlN ceramics are considered to be an ideal material for the new generation of heat dissipation substrates and electronic device packaging due to their high thermal conductivity, thermal expansion coefficient close to silicon, high mechanical strength, good chemical stability, environmental protection, and non-toxicity.
As a ceramic packaging substrate
Compared with Al2O3 ceramic substrates and Si3N4 ceramic substrates, AlN ceramic substrates have the following advantages: Using AlN ceramic substrates as the carrier of the chip can isolate the chip from the module heat dissipation base plate, and the AlN ceramic layer in the middle of the substrate can effectively improve the insulation capacity of the module (ceramic layer insulation withstand voltage> 2.5KV), and aluminum nitride ceramic substrates have good thermal conductivity, and the thermal conductivity can reach 170-320W/mK.
In addition, the expansion coefficient of AlN ceramic substrate is similar to that of silicon, which will not cause stress damage to the chip. The peeling resistance of aluminum nitride ceramic substrate is >20N/mm2, with excellent mechanical properties, corrosion resistance, not easy to deform, and can be used in a wide temperature range.
As a semiconductor equipment component
In semiconductor processing, the heat dissipation of silicon wafers is very important. If the uniform temperature of the silicon wafer surface cannot be guaranteed, the processing uniformity will not be ensured during the processing of the silicon wafer, and the processing accuracy will also be affected.
The advantages of using aluminum nitride as the main material are: a wide range of temperature domains and sufficient adsorption force can be obtained by controlling its volume resistivity, and the electrostatic chuck can achieve good temperature uniformity through a high degree of freedom heater design; aluminum nitride is formed by co-firing, and there will be no changes over time due to electrode degradation, which maximizes the product quality; it can operate for a long time in a plasma halogen vacuum atmosphere environment to withstand the most demanding process environment of semiconductors and microelectronics, and can also provide stable adsorption force and temperature control.
As a substrate material
AlN crystal is an ideal substrate for GaN, AlGaN, and AlN epitaxial materials. Compared with sapphire or SiC substrates, AlN and GaN have higher thermal matching and chemical compatibility, and less stress between the substrate and the epitaxial layer. Therefore, when AlN crystal is used as a GaN epitaxial substrate, it can greatly reduce the defect density in the device and improve the performance of the device. It has a good application prospect in the preparation of high-temperature, high-frequency, and high-power electronic devices.
In addition, using AlN crystal as a substrate for AlGaN epitaxial material with high aluminum (Al) components can also effectively reduce the defect density in the nitride epitaxial layer, greatly improving the performance and service life of nitride semiconductor devices. High-quality solar-blind detectors based on AlGaN have been successfully applied.
Edgetech provides customers with excellent-performance aluminum nitride ceramic products through a variety of molding and processing methods, which are widely used in electronic packaging, high-temperature environment applications, semiconductors, and other fields.