Direct wafer bonding technology allows polished semiconductor wafers to be bonded together without the use of adhesives. There is a method for the direct wafer-to-wafer bonding of aluminum nitride to AlN-coated wafers. Direct wafer bonding requires smooth, flat, hydrophilic surfaces that can be activated by appropriately charged hydrogen molecules on the prepared surface. We provide Wafer-level Aluminum Nitride Ceramic Substrate for Direct Wafer Bonding with very smooth (Ra≤0.03um) and flat surfaces.

Aluminum Nitride Ceramic Parameter

Item

Unit

Value

Color

Grayish white, Beige

Water absorption

%

0

Volume Density

g/cm3

≥3.30

Surface roughness

um

0.2-0.85

Warpage

(length ‰)

≤2.5‰

Thermal conductivity

W/m.k

≥170

Thermal expansivity

x 10-6/°C (20℃-800℃)

4-6

Flexural strength

MPa

≥350

Modulus of elasticity

GPa

310-320

Dielectric constant

1MHZ, 25℃

8.9

Dielectric loss

x 10-4

4.6

Dielectric strength

KV/mm

≥15

Volume resistivity

Ω.cm

≥1014

Typical characteristic

-Very high thermal conductivity, Ultra-high thermal conductivity ≥225W/m·k

-High insulation capacity

-Low dielectric constant, effective against electronic signal interference

-Low thermal expansion

-Good metallization capacity

-Expansion coefficient can be matched with semiconductor silicon wafer

-Better mechanical strength than alumina

-Good corrosion resistance to molten metal

-Minimum impurity content, non-toxic, high purity

Application of Wafer-level aluminum nitride ceramic substrate

Ceramic Aluminum Nitride Direct Wafer Bonding

Packing of Wafer-level aluminum nitride ceramic substrate

Our aluminum nitride ceramic substrate is carefully handled to prevent damage during storage and transportation and to preserve the quality of our product in its original condition.