Aluminum nitride substrate is a new type of substrate material, aluminum nitride crystal lattice constant of a = 0.3110nm, c = 0.4890nm, hexagonal crystal system, based on aluminum nitride tetrahedral structural units of brazincite covalent bonding compounds, with good thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic, and the coefficient of thermal expansion of silicon matches a series of excellent characteristics, It is considered to be the ideal material for the new generation of highly integrated semiconductor substrates and electronic packages.

In high-power electronic applications, components such as solid-state transistors generate large amounts of heat, affecting performance. A substrate made of AIN conducts heat while acting as an insulator for the mounted components. Likewise, LED applications generate significant amounts of heat. A conventional heat sink is used with an AIN base plate to dissipate heat and improve performance.

Adopting high efficiency, low cost, and pollution-free ceramic substrate Tape-casting technology, the length and width of the product can reach 200mm, and can also produce ultra-thin substrates with a thickness of 0.15mm. Products with Special specifications can be customized according to customer requirements.

Aluminum Nitride Ceramic Parameter

Item

Unit

Value

Color

Grayish white, Beige

Water absorption

%

0

Volume Density

g/cm3

≥3.30

Surface roughness

um

0.2-0.85

Warpage

(length ‰)

≤2.5‰

Thermal conductivity

W/m.k

≥170

Thermal expansivity

x 10-6/°C (20℃-800℃)

4-6

Flexural strength

MPa

≥350

Modulus of elasticity

GPa

310-320

Dielectric constant

1MHZ, 25℃

8.9

Dielectric loss

x 10-4

4.6

Dielectric strength

KV/mm

≥15

Volume resistivity

Ω.cm

≥1014

Typical characteristic

-Very high thermal conductivity, Ultra-high thermal conductivity ≥225W/m·k

-High insulation capacity

-Low dielectric constant, effective against electronic signal interference

-Low thermal expansion

-Good metallization capacity

-Expansion coefficient can be matched with semiconductor silicon wafer

-Better mechanical strength than alumina

-Good corrosion resistance to molten metal

-Minimum impurity content, non-toxic, high purity

Application of Aluminum Nitride Ceramics

Conventional Tape-casting ceramic substrates are widely used in ceramic metallization, such as DPC (Direct Plated Copper), thin film sputtering method, DBC (Direct Bonded Copper), AMB (Active Metal Brazing), thick film printing, etc., and using these metallization processes to realize: high-power LED industry applications, radio frequency resistor applications, high-power IGBT module applications, etc.

Packing

Our Aluminum Nitride Substrate is carefully handled to prevent damage during storage and transportation and to preserve the quality of our product in its original condition.