The active metal brazing (AMB) process is a further development of DBC process technology. It utilizes a small amount of active elements contained in the filler metal to react with the ceramic to form a reaction layer that can be wetted by the liquid brazing material, thus realizing the bonding of ceramic and metal.

Material: AlN/ZTA/Si3N4

Aluminum Nitride Ceramic Parameter

Item

Unit

Value

Color

Grayish white, Beige

Water absorption

%

0

Volume Density

g/cm3

≥3.30

Surface roughness

um

0.2-0.85

Warpage

(length ‰)

≤2.5‰

Thermal conductivity

W/m.k

≥170

Thermal expansivity

x 10-6/°C (20℃-800℃)

4-6

Flexural strength

MPa

≥350

Modulus of elasticity

GPa

310-320

Dielectric constant

1MHZ, 25℃

8.9

Dielectric loss

x 10-4

4.6

Dielectric strength

KV/mm

≥15

Volume resistivity

Ω.cm

≥1014

Typical characteristic

-Very high thermal conductivity, Ultra-high thermal conductivity ≥225W/m·k

-High insulation capacity

-Low dielectric constant, effective against electronic signal interference

-Low thermal expansion

-Good metallization capacity

-Expansion coefficient can be matched with semiconductor silicon wafer

-Better mechanical strength than alumina

-Good corrosion resistance to molten metal

-Minimum impurity content, non-toxic, high purity

Application

AMB ceramic substrates with higher bond strength and hot/cold cycling characteristics have gotten along with applications such as high-power semiconductor modules, high-frequency switches, wind power generation, new energy vehicles, electric locomotives, and aerospace.

-Various power modules with various power semiconductor components (such as Si-IGBT and SiC-MOSFET).

-Power module units for electric vehicles, new energy sources (wind power, photovoltaic power, etc.), industrial inverters

Packing

Our AMB Ceramic Substrate is carefully handled to prevent damage during storage and transportation and to preserve the quality of our product in its original condition.