An important issue in developing highly reliable, fast, high-power devices with modern technology is heat dissipation, as heat reduces reliability and shortens the life of electronic devices. Thermal conductive materials can help solve this problem. Possible thermal conductive materials include beryllium oxide, silicon carbide, aluminum nitride, and boron nitride. However, beryllium oxide is toxic, silicon carbide is a semiconductor with poor dielectric properties, and boron nitride requires complex processing methods to manufacture items. Only aluminum nitride has the best set of properties, is non-toxic, and can be used to create items in simple and effective ways. Metallization Aluminum Nitride is the most ideal heat dissipation and packaging material among semiconductor electronic materials. Due to its high thermal conductivity, high insulation resistance coefficient, excellent mechanical strength, and thermal shock resistance, it has also become one of the important precision ceramic materials.

The main metallization of aluminum nitride ceramics includes thick film metallization, thin film metallization, electroless plating metallization, and laser metallization.

Aluminum Nitride Ceramic Parameter

Item

Unit

Value

Color

Grayish white, Beige

Water absorption

%

0

Volume Density

g/cm3

≥3.30

Surface roughness

um

0.2-0.85

Warpage

(length ‰)

≤2.5‰

Thermal conductivity

W/m.k

≥170

Thermal expansivity

x 10-6/°C (20℃-800℃)

4-6

Flexural strength

MPa

≥350

Modulus of elasticity

GPa

310-320

Dielectric constant

1MHZ, 25℃

8.9

Dielectric loss

x 10-4

4.6

Dielectric strength

KV/mm

≥15

Volume resistivity

Ω.cm

≥1014

Typical characteristic

AlN ceramic metallization has many advantages. It is also an ideal electronic packaging material and can be used as a substrate to make printed circuit boards for use in high-frequency circuits. In addition, aluminum nitride ceramic metallization has superior heat transfer properties and is suitable for high-power circuits.

-High thermal conductivity

-The thermal expansion coefficient can match that of semiconductor silicon wafers

-Has high insulation resistance and dielectric strength

-Has low dielectric constant and dielectric loss

-High mechanical properties and good machining performance

-Has a very low secondary electron emission coefficient

-Non-toxic

Application of Aluminum Nitride Ceramics

-Ideal with heat dissipation and packaging materials for large-scale integrated circuits, semiconductor module circuits, and high-power devices

Packing

Our Metallized AlN Ceramic is carefully handled to prevent damage during storage and transportation and to preserve the quality of our product in its original condition.