Molecular beam epitaxy (MBE) is one of the methods for producing gallium arsenide epitaxial wafers. This method can prepare epitaxial materials with multi-element, multi-layer, homogeneous, heterogeneous, superlattice, and quantum well structures. The crystal has high purity and good chemical stability. Pyrolytic boron nitride (PBN) MBE crucibles are produced via a CVD process, forming a solid with all boron nitride crystals growing parallel to the surface from which the vapor is deposited.

-Can produce large-sized crucibles (maximum diameter 12 inches, maximum height 17 inches)

-High density (up to 2.2g/cm3)

– High purity (>99.99%)

-Not easy to crack (high interlayer strength)


The MBE crucible is mainly used as a beam source crucible in the molecular beam epitaxy (MBE) method.


As a ceramic material, boron nitride is quite fragile in a lot of cases. The Pyrolytic Boron Nitride (PBN) MBE Crucibles are usually held in plastic bags by vacuum, and protected with heavy foam.