Silicon nitride ceramics can be used as high-temperature insulating materials. The performance of silicon nitride insulators depends on resistivity characteristics and the interpretation of band theory on the ability of solid electronic conductors. Factors affecting the insulation properties of ceramic materials mainly depend on the synthesis method and purity. Unnitrided free silicon in the material, as well as alkali metals, alkaline earth metals, iron, titanium, nickel and other impurities introduced during the preparation process, will deteriorate the electrical properties of silicon nitride ceramics.

Silicon nitride Performance

Item

Unit

Si3N4

Type

–

Gas pressure sintered

Density

g/cm3

3.2-3.3

Color

–

Black, Grey

Young Modulus

GPa

300~320

Vickers Hardness

GPa

15 – 17

Compressive Strength

MPa

2200

Bending Strength

MPa

600-1000

Thermal Conductivity

W/m.K

20-30

Thermal Expansion

10-6/°C

3.2

Max. Working Temp.

°C

1200

Volume Resistivity

Ω ·cm

> 1014

Dielectric Constant

–

6

Dielectric Strength

kV/mm

12

Fracture toughness

MPa·m1/2

5.0-7.0

*Tested at room temperature

*The above information is for comparison only. The exact characteristics will vary depending on the manufacturing method.

Typical properties of silicon nitride ceramics

-High temperature stability

-Abrasion resistance

-Insulation

Application of the Si3N4 Electrical Insulator

-power systems

-aerospace fields

-automobile manufacturing fields

Packing

Silicon Electrical Insulators use appropriate outer boxes and internal buffer materials, and some components are also vacuum-packed.