Silicon nitride plates are commonly used ceramic materials in the metallurgical industry due to their uniform performance at high temperatures. The microstructure of silicon nitride plates provides excellent resistance to thermal shock. Silicon nitride also has excellent creep and oxidation resistance, and its low thermal conductivity and high wear resistance make it an excellent material capable of withstanding the conditions of most industrial applications.

Silicon nitride wafers are produced in 5 different methods, including SRBSN, GPSN, HPSN, HIP-SN, and RBSN, so their applications and working materials vary slightly. Of these five production methods, GPSN is most commonly used to produce Si3N4 components.

Silicon nitride Performance

Item

Unit

Si3N4

Type

Gas pressure sintered

Density

g/cm3

3.2-3.3

Color

Black, Grey

Young Modulus

GPa

300~320

Vickers Hardness

GPa

15 – 17

Compressive Strength

MPa

2200

Bending Strength

MPa

600-1000

Thermal Conductivity

W/m.K

20-30

Thermal Expansion

10-6/°C

3.2

Max. Working Temp.

°C

1200

Volume Resistivity

Ω ·cm

> 1014

Dielectric Constant

6

Dielectric Strength

kV/mm

12

Fracture toughness

MPa·m1/2

5.0-7.0

*Tested at room temperature

*The above information is for comparison only. The exact characteristics will vary depending on the manufacturing method.

Silicon Nitride Plate Applications

-High-performance cutting tools

-Special applications in mechanical engineering

-used for high-frequency welding ceramic clamping block, high-temperature quenching ceramic jig, ceramic positioning jig

Silicon nitride ceramic positioning block production method

Hot pressing molding and sintering. Due to the strict control of the grain boundary phase composition of Si3N4 ceramics and the appropriate heat treatment after sintering, the strength(up to more than 490MPa) can be obtained even at temperatures up to 1300°C without significant decrease. Si3N4 is a ceramic material with good creep resistance. The mechanical properties of Si3N4 ceramics produced by hot pressing sintering are better than those of reaction sintering Si3N4 ceramics, and they have the characteristics of high strength and high density. However, the manufacturing cost is high and the sintering equipment is complex. Due to the large shrinkage of the sintered body, the size of the product is reduced. Limited precision makes it difficult to manufacture complex parts. Only parts with simple shapes can be manufactured, and the processing of the workpiece is also difficult.

Packing

Silicon nitride plates use appropriate outer boxes and internal buffer materials, and some components are also vacuum-packed.