Nitride Powder Product Overview
1. Product Description
Nitride powders are advanced ceramic materials composed of metal/non-metal elements bonded with nitrogen. They exhibit exceptional properties such as high melting points, extreme hardness, chemical inertness, and thermal stability, making them ideal for cutting tools, electronics, coatings, and semiconductor applications.
2. Key Nitride Types & Properties
| Type | Formula | Key Characteristics | Primary Applications |
|---|---|---|---|
| Aluminum Nitride | AlN | High thermal conductivity (~320 W/m·K), electrical insulation, low thermal expansion | LED substrates, electronic packaging, power modules |
| Silicon Nitride | Si₃N₄ | High strength, thermal shock resistance (up to 1800°C) | Bearings, turbine components, aerospace parts |
| Boron Nitride | BN | Hexagonal BN: Lubricious; Cubic BN: Superhard (2nd to diamond) | High-temperature lubricants, cutting tools |
| Titanium Nitride | TiN | Gold-colored, extreme hardness (~2500 HV), wear-resistant | Tool coatings, decorative films, conductive layers |
| Gallium Nitride | GaN | Wide-bandgap semiconductor (3.4 eV), high electron mobility, high-temperature capable | 5G devices, power electronics, LEDs, RF chips |
3. Featured Additions: TiN & GaN
① Titanium Nitride (TiN) Powder
Properties:
Metallic gold appearance with hardness rivaling sapphire.
High melting point (~2950°C), excellent corrosion/oxidation resistance.
Conductive, suitable for functional coatings.
Applications:
Tool coatings (drills, milling cutters) to extend lifespan.
Decorative finishes (watches, architectural hardware).
Diffusion barriers in semiconductors.
② Gallium Nitride (GaN) Powder
Properties:
3rd-gen semiconductor outperforming silicon in efficiency and power density.
Operates at high frequencies/voltages with minimal heat loss.
Applications:
Fast-charging adapters (e.g., smartphone chargers), EV power systems.
5G base stations, radar, and RF amplifiers.
Blue/UV LEDs and laser diodes.
4. Technical Specifications (Customizable)
TiN Powder: Purity ≥99.5%, particle size 0.5–5 µm.
GaN Powder: Purity ≥99.99%, nano-scale available.
Other Parameters: Oxygen content (<500 ppm), crystal phase (α/β/cubic), BET surface area.
5. Manufacturing Methods
TiN: Direct nitridation of Ti metal or CVD.
GaN: Ammonothermal synthesis, MOCVD epitaxy (for thin films).
6. Quality & Compliance
Tested via XRD (crystallinity), SEM/TEM (morphology), laser diffraction (particle size).
Complies with ISO 9001, RoHS, REACH.
7. Packaging & Storage
Vacuum-sealed or argon-packed to prevent oxidation.
Store in dry, cool conditions (GaN/TiN are moisture-sensitive).
8. Safety Notes
Nano powders: Use PPE (masks/gloves) to avoid inhalation.
AlN/GaN: Handle in dry environments to minimize hydrolysis.